Journal Papers
Review papers on theory of quantum dot lasers
L.V. Asryan, "Theoretical investigation of factors controlling the operating characteristics of quantum dot lasers: a review," J. Nanophoton., vol. 3, Art. no. 031601, 25 pages, Jan. 2009.
L.V. Asryan and R.A. Suris, "Theory of threshold characteristics of semiconductor quantum dot lasers," Semicond., vol. 38, no. 1, pp. 1-22, Jan. 2004.
L.V. Asryan and R.A. Suris, "Theory of threshold characteristics of quantum dot lasers: Effect of quantum dot parameter dispersion," International J. High Speed Electron. Syst., Special Issue on "Quantum Dot Heterostructures - Fabrication, Application, Theory," vol. 12, no. 1, pp. 111-176, Mar. 2002.
Papers on novel designs of quantum dot lasers
D.-S. Han and L.V. Asryan, "Characteristic temperature of a tunneling-injection quantum dot laser: Effect of out-tunneling from quantum dots," Solid-State Electron., vol. 52, no. 10, pp.1674-1679, Oct. 2008.
D.-S. Han and L.V. Asryan, "Tunneling-injection of electrons and holes into quantum dots: a tool for high-power lasing," Appl. Phys. Lett., vol. 92, no. 25, Art. no. 251113, pp. 251113-1-251113-3, June 2008.
L.V. Asryan and S. Luryi, "Temperature-insensitive semiconductor quantum dot laser," Solid-State Electron., vol. 47, no. 2, pp. 205-212, Feb. 2003.
L.V. Asryan and S. Luryi, "Tunneling-injection quantum-dot laser: ultrahigh temperature stability," IEEE J. Quantum Electron., vol. 37, no. 7, pp. 905-910, July 2001.
Papers on general theoretical approach to threshold and power characteristics of semiconductor lasers with a quantum-confined active region
L.V. Asryan. "Spontaneous radiative recombination and nonradiative Auger recombination in quantum-confined heterostructures." Quantum Electron. , vol. 35, no. 12, pp. 1117-1120, Dec. 2005.
L.V. Asryan and S. Luryi, "Effect of internal optical loss on threshold characteristics of semiconductor lasers with a quantum-confined active region," IEEE J. Quantum Electron., vol. 40, no. 7, pp. 833-843, July 2004.
L.V. Asryan and S. Luryi, "Two lasing thresholds in semiconductor lasers with a quantum-confined active region," Appl. Phys. Lett., vol. 83, no. 26, pp. 5368-5370, Dec. 2003.
L.V. Asryan, S. Luryi and R.A. Suris, "Internal efficiency of semiconductor lasers with a quantum-confined active region," IEEE J. Quantum Electron., vol. 39, no. 3, pp. 404-418, Mar. 2003.
L.V. Asryan, S. Luryi and R.A. Suris, "Intrinsic nonlinearity of the light-current characteristic of semiconductor lasers with a quantum-confined active region," Appl. Phys. Lett., vol. 81, no. 12, pp. 2154-2156, Sept. 2002.
Papers on theory of quantum dot lasers
L. Jiang and L.V. Asryan, "Multimode emission and optical power in a semiconductor quantum dot laser," Nanotechnology, vol. 19, no. 41, Art. no. 415204, 8 pages, Oct. 2008.
L. Jiang and L.V. Asryan, "How many longitudinal modes can oscillate in a quantum dot laser: an analytical estimate," IEEE Photon. Technol. Lett., vol. 20, no. 20, pp. 1661-1663, Oct. 2008.
L. Jiang and L.V. Asryan. "Internal-loss-limited maximum operating temperature and characteristic temperature of quantum dot laser." Laser Phys. Lett., vol. 4, no. 4, pp. 265-269, Apr. 2007.
L. Jiang and L.V. Asryan. "Excited-state-mediated capture of carriers into the ground state and the saturation of optical power in quantum-dot lasers". IEEE Photon. Technol. Lett., vol. 18, no. 24, pp. 2611-2613, Dec. 2006.
L.V. Asryan. "Maximum power of quantum dot laser versus internal loss." Appl. Phys. Lett. , vol. 88, no. 7, Art. no. 073107, pp. 073107-1-073107-3, Feb. 2006.
L.V. Asryan, M. Grundmann, N.N. Ledentsov, O. Stier, R.A. Suris, D. Bimberg, "Maximum modal gain of a self-assembled InAs/GaAs quantum-dot laser," J. Appl. Phys., vol. 90, no. 3, pp. 1666-1668, Aug. 2001.
L.V. Asryan, M. Grundmann, N.N. Ledentsov, O. Stier, R.A. Suris, and D. Bimberg, "Effect of excited-state transitions on the threshold characteristics of a quantum dot laser," IEEE J. Quantum Electron., vol. 37, no. 3, pp. 418-425, March 2001.
L.V. Asryan and R.A. Suris, "Carrier Photoexcitation from Levels in Quantum Dots to States of the Continuum in Lasing," Semicond., vol. 35, no. 3, pp. 343-346, March 2001.
L.V. Asryan and R.A. Suris, "Longitudinal spatial hole burning in a quantum-dot laser," IEEE J. Quantum Electron., vol. 36, no. 10, pp. 1151-1160, Oct. 2000.
L.V. Asryan and R.A. Suris, "Spatial hole burning and multimode generation threshold in quantum-dot lasers," Appl. Phys. Lett., vol. 74, no. 9, pp. 1215-1217, March 1999.
L.V. Asryan and R.A. Suris, "Role of thermal ejection of carriers in the burning of spatial holes in quantum dot lasers," Semicond., vol. 33, no. 9, pp. 981-984, Sept. 1999.
L.V. Asryan and R.A. Suris, "Temperature dependence of the threshold current density of a quantum dot laser," IEEE J. Quantum Electron., vol. 34, no. 5, pp. 841-850, May 1998.
L.V. Asryan and R.A. Suris, "Characteristic temperature of quantum dot laser," Electron. Lett., vol. 33, no. 22, pp. 1871-1872, Oct. 1997.
L.V. Asryan and R.A. Suris, "Charge neutrality violation in quantum dot lasers," IEEE J. Select. Topics Quantum Electron., vol. 3, no. 2, pp. 148-157, Apr. 1997.
L.V. Asryan and R.A. Suris, "Inhomogeneous line broadening and the threshold current density of a semiconductor quantum dot laser," Semicond. Sci. Technol., vol. 11, no. 4, pp. 554-567, Apr. 1996.
Papers on experiment and theory of quantum dot lasers
L.V. Asryan. "Limitations on standard procedure of determining internal loss and efficiency in quantum dot lasers." J. Appl. Phys. , vol. 99, no. 1, Art. no. 013102, pp. 013102-1-013102-4, Jan. 2006.
M.V. Maksimov, D.S. Sizov, A.G. Makarov, I.N. Kayander, L.V. Asryan, A.E. Zhukov, V.M. Ustinov, N.A. Cherkashin, N.A. Bert, N.N. Ledentsov, and D. Bimberg, "Effect of Nonradiative Recombination Centers on Photoluminescence Efficiency in Quantum Dot Structures," Semiconductors, vol. 38, no. 10, pp. 1207-1211, Oct. 2004.
M.V. Maximov, L.V. Asryan, Yu.M. Shernyakov, A.F. Tsatsul'nikov, I.N. Kaiander, V.V. Nikolaev, A.R. Kovsh, S.S. Mikhrin, V.M. Ustinov, A.E. Zhukov, Zh.I. Alferov, N.N. Ledenstov, and D. Bimberg, "Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation," IEEE J. Quantum Electron., vol. 37, no. 5, pp. 676-683, May 2001.
M.V. Maximov, Yu.M. Shernyakov, A.F. Tsatsul'nikov, A.V. Lunev, A.V. Sakharov, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, A.R. Kovsh, P.S. Kop'ev, L.V. Asryan, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg, A.O. Kosogov, and P. Werner, "High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser," J. Appl. Phys., vol. 83, no. 10, pp. 5561-5563, May 1998.
On-line papers on theory of quantum dot lasers
L.V. Asryan and R.A. Suris, "Theory of the threshold current of a semiconductor quantum dot laser," Ioffe Institute Prize Winners, 1998. pp. 52-59.
Papers on quantum well lasers
L.V. Asryan, N.A. Gun'ko, A.S. Polkovnikov, G.G. Zegrya, R.A. Suris, P.-K. Lau, and T. Makino, "Threshold characteristics of InGaAsP/InP multiple quantum well lasers," Semicond. Sci. Technol., vol. 15, no. 12, pp. 1131-1140, Dec. 2000.
L.V. Asryan, N.A. Gun'ko, A.S. Polkovnikov, R.A. Suris, G.G. Zegrya, B.B. Elenkrig, S. Smetona, J.G. Simmons, P.-K. Lau, and T. Makino, "High power and high temperature operation of InGaAsP/InP multiple quantum well lasers," Semicond. Sci. Technol., vol. 14, no. 12, pp. 1069-1075, Dec. 1999.
SPIE
L. Jiang and L.V. Asryan, "Spatial hole burning and optical power in a quantum dot laser," Proc. SPIE, vol. 7224, pp. 72240R-1--72240R-7, Jan. 2009.
D.-S. Han and L.V. Asryan, "Light-current curve of a tunneling-injection quantum dot laser," Proc. SPIE, vol. 6902, pp. 69020B-1--69020B-12, Jan. 2008.
L. Jiang and L.V. Asryan. "Effect of excited states on light-current characteristic of a quantum dot laser". Proc. SPIE, vol. 6481, pp. 648108-1--648108-7, Jan. 2007.
L. Jiang and L.V. Asryan. "Maximum operating temperature and characteristic temperature of a quantum dot laser in the presence of internal loss". Proc. SPIE, vol. 6481, pp. 648107-1--648107-6, Jan. 2007.
L.V. Asryan. "Feasibility of conventional method of extracting internal loss and internal quantum efficiency in edge-emitting quantum dot lasers." Proc. SPIE, vol. 6129, pp. 21-28, Jan. 2006.
L.V. Asryan and S. Luryi, "Internal optical loss and threshold characteristics of semiconductor lasers with a reduced-dimensionality active region," Proc. SPIE, vol. 5349, pp. 69-80, Jan. 2004.
L.V. Asryan and S. Luryi, "Tunneling-injection quantum dot laser," Proc. SPIE, vol. 4656, pp. 59-68, Jan. 2002.
L.V. Asryan, M. Grundmann, N.N. Ledentsov, O. Stier, R.A. Suris, and D. Bimberg, "Effect of excited-state transitions on the threshold characteristics of a quantum dot laser," Proc. SPIE, vol. 3944, pp. 823-834, Jan. 2000.
L.V. Asryan and R.A. Suris, "Spatial hole burning in a quantum dot laser," Proc. SPIE, vol. 3625, pp. 293-301, Jan. 1999.
L.V. Asryan and R.A. Suris, "Temperature sensitivity of threshold current density of a quantum dot laser," Proc. SPIE, vol. 3283, pp. 816-827, Jan. 1998.
R.A. Suris and L.V. Asryan, "Quantum-Dot Laser: Gain Spectrum Inhomogeneous Broadening and Threshold Current," Proc. SPIE, vol. 2399, pp. 433-444, Jan. 1995.
Conference proceedings
CLEO
L.V. Asryan. "Internal Loss as a Limiting Factor for the Maximum Power of a Quantum Dot Laser". CLEO'2005. Baltimore, MD, 22-27 May 2005. Paper no. CThH4.
L.V. Asryan, S. Luryi and R.A. Suris, "Theory of high power performance of a quantum dot laser," Technical Digest of CLEO'2002. Long Beach, CA, USA, 19-24 May 2002. pp. 600-601.
IEEE/LEOS
L.V. Asryan and R.A. Suris, "Critical tolerable parameters of a quantum dot laser structure," IEEE/LEOS Summer Topical Meeting on Nanostructures and Quantum Dots. San Diego, CA, USA, 26-27 July 1999. Conference Digest, pp. 9-10.
L.V. Asryan and R.A. Suris, "Spatial hole burning and multimode generation threshold in quantum dot lasers," Proceedings of IEEE LEOS 11th Annual Meeting. Orlando, FL, December 1-4, 1998. vol. 1, pp. 113-114.
L.V. Asryan, N.A. Gun'ko, A.S. Polkovnikov, G.G. Zegrya, and R.A. Suris, B.B. Elenkrig, S. Smetona, J.G. Simmons, P.-K. Lau and T. Makino, "Heating effect on light-current characteristics of multiple quantum well lasers," Proceedings of IEEE LEOS 11th Annual Meeting. Orlando, FL, December 1-4, 1998. vol. 2, pp. 108-109.
L.V. Asryan and R.A. Suris, "Theoretical analysis of the temperature dependence of threshold current density of a quantum dot laser," Proceedings of IEEE LEOS 10th Annual Meeting. San Francisco, CA, November 10-13, 1997. vol. 2, pp. 496-497.
L.V. Asryan and R.A. Suris, "To the theory of quantum dot lasers: self-consistent consideration of quantum dot charge," 15th IEEE International Semiconductor Laser Conference. Haifa, Israel, October 13-18, 1996. Conference Digest, pp. 107-108.
International Conferences on the Physics of Semiconductors
L.V. Asryan and R.A. Suris, "Spatial hole burning in quantum dot lasers," Proceedings of the 24rd International Conference on the Physics of Semiconductors. Jerusalem, Israel, August 2-7, 1998. Editor D. Gershoni, World Scientific, Singapore, Electronic version (CD).
L.V. Asryan and R.A. Suris, "Charge neutrality violation in quantum dot lasers," Proceedings of the 23rd International Conference on the Physics of Semiconductors. Berlin, Germany, July 21-26, 1996. Editors M. Scheffler, R. Zimmermann, World Scientific, Singapore, vol. 2, pp. 1369-1372.
International Symposia "Nanostructures: Physics and Technology"
L. Jiang and L.V. Asryan, "Indirect capture and ground-state lasing in quantum dot structures," Proc. 15th International Symposium "Nanostructures: Physics and Technology". June 25–29, 2007, Novosibirsk, Russia. pp. 38-39.
L.V. Asryan. "Optical power of a quantum dot laser". Proceedings of 14th International Symposium "Nanostructures: Physics and Technology". June 26-30, 2006, St. Petersburg, Russia. pp. 7-8.
L.V. Asryan and R.A. Suris, "Theory of threshold characteristics of quantum dot lasers," Proceedings of International Symposium "Nanostructures: Physics and Technology". June 18-23, 2000, St.Petersburg, Russia. pp. 6-11.
L.V. Asryan and R.A. Suris, "Effect of spatial hole burning and multi-mode generation threshold in quantum dot lasers," Proceedings of International Symposium "Nanostructures: Physics and Technology". June 22-26, 1998, St.Petersburg, Russia. pp. 390-393.
L.V. Asryan and R.A. Suris, "Effect of carrier recombination in the optical confinement layer on the temperature dependence of threshold current density of a quantum dot laser," Proceedings of International Symposium "Nanostructures: Physics and Technology". June 23-27, 1997, St.Petersburg, Russia. pp. 176-179.
L.V. Asryan and R.A. Suris, "Gain and Current Density of Quantum Dot Laser," Proceedings of International Symposium "Nanostructures: Physics and Technology". June 24-28, 1996, St.Petersburg, Russia. pp. 354-357.
L.V. Asryan and R.A. Suris, "Linewidth Broadening and Threshold Current Density of Quantum-Box Laser," Proceedings of International Symposium "Nanostructures: Physics and Technology". June 20-24, 1994, St.Petersburg, Russia. pp. 181-184.
International Semiconductor Device Research Symposia
D.-S. Han and L.V. Asryan, "Characteristic temperature of a tunneling-injection quantum dot laser," Proceedings of 2007 International Semiconductor Device Research Symposium - ISDRS'2007. College Park, MD, December 12-14, 2007. Paper no. FP5-04, pp. 626-627.
L. Jiang and L.V. Asryan, "Maximum number of longitudinal modes oscillating in a quantum dot laser due to spatial hole burning," Proceedings of 2007 International Semiconductor Device Research Symposium - ISDRS'2007. College Park, MD, December 12-14, 200. Paper no. WP9-18-07, pp. 357-358.
L.V. Asryan. "Slope efficiency versus cavity length in quantum dot lasers". Proceedings of 2005 International Semiconductor Device Research Symposium - ISDRS'2005. Holiday Inn Select, Bethesda, MD, December 7-9, 2005. Paper no. FA6-05.
L.V. Asryan and S. Luryi, "Temperature-insensitive quantum dot laser," Proceedings of 2001 International Semiconductor Device Research Symposium - ISDRS'2001. Holiday Inn Georgetown, Washington, DC, December 5-7, 2001. pp. 359-363.
L.V. Asryan and R.A. Suris, "To the theory of temperature dependence of threshold current density of a quantum dot laser," Proceedings of 1997 International Semiconductor Device Research Symposium - ISDRS'97. Omni Charlottesville Hotel, Charlottesville, VA, December 10-13, 1997. pp. 433-436.
International Symposium and Spring School "Nano and Giga Challenges in Electronics and Photonics”
L. Jiang and L.V. Asryan. "Maximum operating temperature of quantum dot laser." Abstracts of International Symposium and Spring School "Nano and Giga Challenges in Electronics and Photonics". Phoenix, Arizona, March 12-16, 2007. p. 37.
L.V. Asryan. "Operational limits of high power quantum dot lasers." Abstracts of International Symposium and Spring School "Nano and Giga Challenges in Electronics and Photonics". Phoenix, Arizona, March 12-16, 2007. p. 36.
Invited Presentations & Papers
L.V. Asryan. "Operational limits of high power quantum dot lasers." International Symposium and Spring School "Nano and Giga Challenges in Electronics and Photonics". Phoenix, Arizona, March 12-16, 2007.
L.V. Asryan. "Light-current characteristic of a quantum dot laser." Proceedings of International Workshop on "Semiconductor quantum dot based devices and applications". INSTITUT CURIE, Paris, France, 16-17 March 2006.
L.V. Asryan and S. Luryi, "Tunneling-injection quantum dot laser," Proceedings of SPIE International Symposium PHOTONICS WEST'2002. San Jose, CA, USA, 19-25 January 2002. vol. 4656, pp. 59-68.
L.V. Asryan and R.A. Suris, "Theory of threshold characteristics of quantum dot lasers," Proceedings of International Symposium "Nanostructures: Physics and Technology". June 18-23, 2000, St.Petersburg, Russia. pp. 6-11.
L.V. Asryan and R.A. Suris, "Theory of threshold characteristics of quantum dot lasers," Abstracts of the 3rd Belarusian-Russian Workshop "Semiconductor lasers and systems". Minsk, Belarus, June 22-24, 1999. p. 12.
Books/Chapters/Editorships
Review chapters on theory of quantum dot lasers
L.V. Asryan and S. Luryi, "Quantum dot lasers: Theoretical Overview," Chapter 4 (113-158) in Semiconductor Nanostructures for Optoelectronic Applications. Edited by Todd Steiner, Artech House: Boston, December 2004, 424 p., ISBN 1-58053-751-0.
L.V. Asryan and R.A. Suris, "Theory of threshold characteristics of quantum dot lasers: Effect of quantum dot parameter dispersion," Chapter 5 in Selected Topics in Electronics and Systems, vol. 25, "Quantum Dots." Edited by E. Borovitskaya and M.S. Shur, Singapore: World Scientific, 2002. 206 p.
Chapters on theory of quantum dot lasers
L.V. Asryan and S. Luryi, "Temperature-insensitive semiconductor laser," Future Trends in Microelectronics: The Nano Millennium. Edited by S. Luryi, J.M. Xu, and A. Zaslavsky, Wiley Interscience, New York, 2002. pp. 219-230.
Updated 07/25/09